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10BQ100TR Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
10BQ100TR
Vishay
Vishay Semiconductors Vishay
10BQ100TR Datasheet PDF : 6 Pages
1 2 3 4 5 6
10BQ100PbF
Vishay High Power Products Schottky Rectifier, 1 A
180
D = 0.20
170
DC
D = 0.25
D = 0.33
160
D = 0.50
D = 0.75
150
140
Square wave (D = 0.50)
130
Rated VR applied
120
See note (1)
110
0
0.4
0.8
1.2
1.6
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1000
1.0
D = 0.20
D = 0.25
0.8
D = 0.33
D = 0.50
D = 0.75
0.6
0.4
RMS limit
DC
0.2
0
0
0.3
0.6
0.9
1.2
1.5
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94114
Revision: 15-Apr-08

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