10BQ100TR Ver la hoja de datos (PDF) - Vishay Semiconductors
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10BQ100TR Datasheet PDF : 6 Pages
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10BQ100PbF
Vishay High Power Products Schottky Rectifier, 1 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
CT
LS
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.78
0.89
0.62
0.72
0.5
1
42
2.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
DC operation
Maximum thermal resistance,
junction to ambient
RthJA
Approximate weight
Marking device
Case style SMB (similar DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 175
UNITS
°C
36
°C/W
80
0.10
g
0.003
oz.
V1J
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94114
Revision: 15-Apr-08
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