DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

10BQ015M(2012) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
10BQ015M
(Rev.:2012)
Vishay
Vishay Semiconductors Vishay
10BQ015M Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
110
100
D = 0.75
DC
90
D = 0.50
D = 0.33
D = 0.25
80
D = 0.20
70
Square wave (D = 0.50)
60 80 % rated VR applied
see note (1)
50
0.0
0.3
0.6
0.9
1.2
1.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1000
VS-10BQ015-M3
Vishay Semiconductors
0.4
D = 0.75
D = 0.50
0.3 D = 0.33
D = 0.25
D = 0.20
0.2
RMS limit
DC
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
At any rated load condition and
with rated VRRM applied
following surge
100
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-May-12
4
Document Number: 93349
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]