10BQ40TRPBF Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
10BQ40TRPBF Datasheet PDF : 6 Pages
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10BQ040
Bulletin PD-2.397 rev. G 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
10BQ040
40
Absolute Maximum Ratings
Parameters
10BQ Units Conditions
IF(AV) Max. Average Forward Current
1.0
A 50% duty cycle @ TL = 112 °C, rectangular wave form
IFSM Max.PeakOneCycleNon-Repetitive
430
A 5µs Sine or 3µs Rect. pulse
Following any rated
load condition and
Surge Current
45
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
EAS Non- Repetitive Avalanche Energy
3.0
mJ TJ = 25 °C, IAS = 1A, L = 6mH
IAR Repetitive Avalanche Current
1.0
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
10BQ Units
Conditions
VFM Max. Forward Voltage Drop (1)
* See Fig. 1
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Volatge Rate of Charge
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
0.53
0.70
0.49
0.64
0.1
4
80
2.0
10000
V @ 1A
V @ 2A
TJ = 25 °C
V @ 1A
V @ 2A
TJ = 125 °C
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
nH Measured lead to lead 5mm from package body
V/ µs
Thermal-Mechanical Specifications
Parameters
10BQ Units
Conditions
TJ Max.Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJL
Max. Thermal Resistance Junction
to Lead
(**)
36
°C/W DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
80 °C/W
wt Approximate Weight
0.10(0.003) g (oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR1F
(*)
dPtot
dTj
<
1
Rth( j-a)
thermal
runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
www.irf.com
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