VS-100BGQ045 Ver la hoja de datos (PDF) - Vishay Semiconductors
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VS-100BGQ045 Datasheet PDF : 7 Pages
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VS-100BGQ045
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
50 A
100 A
TJ = 25 °C
50 A
100 A
TJ = 150 °C
TJ = 150 °C, VR = 45 V
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from tab to mounting plane
Rated VR
TYP. MAX.
0.54
0.58
0.69
0.77
0.48
0.52
0.65
0.71
600
1000
0.3
1
180
320
2700
3.5
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
TJ, TStg
RthJC
DC operation
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style PowerTab®
VALUES
-55 to +150
UNITS
°C
0.50
°C/W
0.30
5
g
0.18
oz.
1.2 (10)
2.4 (20)
N·m
(lbf · in)
100BGQ045
Revision: 15-Jun-15
2
Document Number: 94580
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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