MT28F160A3 Ver la hoja de datos (PDF) - Micron Technology
Número de pieza
componentes Descripción
Fabricante
MT28F160A3 Datasheet PDF : 28 Pages
| |||
ADVANCE
1 MEG x 16
ENHANCED BOOT BLOCK FLASH MEMORY
COMMAND DEFINITIONS
Once a specific command code has been entered, the
WSM executes an internal algorithm generating the nec-
essary timing signals to program, erase, and verify data.
See Table 3 for the CSM command definitions and data
for each of the bus cycles.
Table 3
Command Definitions
FIRST CYCLE
SECOND CYCLE
COMMAND
OPERATION ADDRESS CSM/INPUT OPERATION ADDRESS
READ ARRAY
WRITE
X
FFh
READ
WA
IDENTIFY DEVICE
WRITE
X
90h
READ
IA
READ STATUS REGISTER
WRITE
X
70h
READ
BA
WORD PROGRAM
WRITE
X
10h/40h
WRITE
WA
BLOCK ERASE
WRITE
X
20h
WRITE
BA
PROGRAM/ERASE SUSPEND WRITE
X
B0h
PROGRAM/ERASE RESUME WRITE
X
D0h
CLEAR STATUS REGISTER
WRITE
X
50h
DATA
AD
ID
SRD
PD
D0h
NOTE: 1. The command data is written through DQ0-DQ7
2. ID = Manufacturer ID: 002Ch; Device ID (Top Boot): 4490h; Device ID (Bottom Boot): 4491h
3. IA = Identify address: 00000h for manufacturer code and 00001h for device code
4. BA = Any address within the block to be selected
5. WA = Word address
6. AD = Array data
7. SRD = Data read from status register
8. PD = Data to be written at location WA
9. X = Don’t Care
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
Share Link: 