MT28F160A3 Ver la hoja de datos (PDF) - Micron Technology
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Fabricante
MT28F160A3 Datasheet PDF : 28 Pages
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ADVANCE
1 MEG x 16
ENHANCED BOOT BLOCK FLASH MEMORY
TRUTH TABLE1
FUNCTION
Standby
RESET
READING
READ
Output Disable
WRITE/ERASE (EXCEPT BOOT BLOCKS)2
ERASE SETUP
ERASE CONFIRM3
WRITE SETUP
WRITE4
READ ARRAY5
WRITE/ERASE (BOOT BLOCKS)2
ERASE SETUP
ERASE CONFIRM3
WRITE SETUP
WRITE4
READ ARRAY5
DEVICE IDENTIFICATION6
Manufacturer
Device (top boot)
Device (bottom boot)
RP# CE# OE# WE# WP# VPP
HHXXXX
L XXXXX
A0 DQ0-DQ7 DQ8-DQ15
X High-Z High-Z
X High-Z High-Z
H L L H X X X Data-Out Data-Out
H L H H X X X High-Z High-Z
H L H L X X X 20H
X
H
L
H
L
X VPPH X
D0H
X
H L H L X X X 10H/40H X
H L H L X VPPH X Data-In Data-In
H L H L X X X FFH
X
H L H L X X X 20H
X
H
L
H
L
H VPPH X
D0H
X
H L H L X X X 10H/40H X
H L H L H VPPH X Data-In Data-In
H L H L X X X FFH
X
HL
L HXX L
2CH
00H
HL
L H X X H 90H
44H
HL
L HXXH
91H
44H
NOTE: 1. L = VIL (LOW), H = VIH (HIGH), X = VIL or VIH (“Don’t Care”).
2. VPPH = 2.7V–3.3V for ERASE, and VPPH = 2.7V–3.3V or 5V for WRITE.
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. See Table 3 for the IDENTIFY DEVICE command.
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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