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MT28F160A3 Datasheet PDF : 28 Pages
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ADVANCE
1 MEG x 16
ENHANCED BOOT BLOCK FLASH MEMORY
ARCHITECTURE
The MT28F160A3 flash contains eight 4K-word pa-
rameter blocks and thirty-one 32K-word blocks. The first
two 4K-word blocks are called boot blocks and are locked
with WP# control. Memory is organized by using a blocked
architecture to allow independent erasure of selected
memory blocks. Any address within a block address range
selects that block for the required READ, WRITE, or ERASE
operation (see Figures 1 and 2).
Table 1
Cross Reference for Abbreviated
Device Marks1
PART NUMBER
MT28F160A3FD-9 BET
MT28F160A3FD-9 TET
MT28F160A3FD-11 BET
MT28F160A3FD-11 TET
PRODUCT
MARKING
FW310
FW311
FW312
FW313
SAMPLE
MARKING
FX310
FX311
FX312
FX313
NOTE: 1. The mechanical sample marking is FY310.
RP#
CE#
WE#
OE#
A0–A19
DQ0–DQ15
Data Input
Buffer
CSM
FUNCTIONAL BLOCK DIAGRAM
Data
Register
X DEC
Y/Z DEC
Bank a Blocks
Y/Z Gating/Sensing
ID
Reg.
Status
Reg.
WSM
I/O Logic
Program/
Erase Change
Pump Voltage
Switch
Address
Input
Buffer
APS
Control
Address
CNT WSM
Address Latch
Address
Multiplexer
Output
Multiplexer
Data
Comparator
DQ0–DQ15
Output
Buffer
Y/Z DEC
X DEC
Y/Z Gating/Sensing
Bank b Blocks
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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