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componentes Descripción

Fabricante

HYS64V1000GS

1M x 64/72 SDRAM-Module

Infineon Technologies 

HYS64(72)V1000GS-10/-12/-15

1M x 64/72 SDRAM-Module

DC Characteristics

TA = 0 to 70 °C; VSS = 0 V; V V DD, DDQ = 3.3 V ± 0.3 V

Parameter

Input high voltage

Input low voltage

Output high voltage (IOUT = – 2.0 mA)

Output low voltage (IOUT = 2.0 mA)

Input leakage current, any input

(0 V < VIN < 3.6 V, all other inputs = 0 V)

Output leakage current

(DQ is disabled, 0 V < VOUT < VCC)

Symbol

Limit Values

min.

max.

VIH

2.0

Vcc+0.3

VIL

– 0.5

0.8

VOH

2.4

–

VOL

–

0.4

II(L)

– 10

10

Unit

V

V

V

V

µA

IO(L)

– 10

10

µA

Standby and Refresh Currents (Ta = 0 to 70oC, VCC = 3.3V ± 0.3V)

Parameter

Symbol

Test Condition

Speed

Sort

X64 X72

Note

Precharged Standby

Current in Power

Down Mode

Icc1P

Icc1PS

CKE=<VIL(max), tCK=15ns

CKE=<VIL(max),

tCK=Infinity

12 15 mA

8 10 mA

Precharged Standby

Current in Non-

power

Down Mode

Icc1N

Icc1NS

CKE=>VIH(min), tCK=15ns

Input Change in every 30ns

CKE=>VIH(min),

tCK=Infinity

No Input Change

48 60 mA

24 30 mA

Active Standby

Current in Power

Down Mode

Icc2P CKE=<VIL(max), tCK=15ns

Icc2PS CKE=<VIL(max),

tCK=Infinity

12 15 mA

8 10 mA

Active Standby

Current in Non-

power Down Mode

Icc2N CKE=>VIH(min), tCK=15ns

Input Change in every 30ns

Icc2NS CKE=>VIH(min),tCK=Infinity

No Input Change

64 80 mA

40 50 mA

Refresh Current

Icc3 tRC=>tRC(min)

CAS Latency = 3

-10 500 625 mA

-12 440 550 mA

-15 360 450 mA

Self Refresh Current Icc4 CKE=<0,2V

8 10 mA

Operating Current

Icc5 tRC=tRC(min), tck>tck,min -10

Io = 0mA

-12

CAS Latency=3,Burst = 4 -15

560 700 mA

500 625 mA

400 500 mA

Semiconductor Group

6

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