HYS64V1000GU-60 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
HYS64V1000GU-60 Datasheet PDF : 9 Pages
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3.3V 1M x 64-Bit SDRAM Module
3.3V 1M x 72-Bit SDRAM Module
168 pin unbuffered DIMM Modules
HYS64V1000GS-10/-12/-15
HYS72V1000GS-10/-12/-15
Target Information
• 168 Pin JEDEC Standard, Unbuffered 8 Byte
Dual-In-Line SDRAM Module
• 1 bank 1M x 64, 1M x 72 organisation
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Performance:
fCK
Clock frequency
tCK3 Clock cycle time
tAC3
Clock access time
CAS latency = 3
-10 -12 -15
100 83 66
10 12 15
9 11 13
Units
MHz
ns
ns
• Single +3.3V(± 0.3V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial presence detects
• Utilizes four / five 1M x 16 SDRAMs in TSOPII-50 packages
• 4096 refresh cycles every 64 ms
• Gold contact pad
• Card Size: 133,35mm x 25,40mm x 3,00 mm
• This SDRAM product familiy is intended to be fully pin and architecture compatible with the 168
pin Unbuffered DRAM DIMM module family.
Semiconductor Group
1
4.96
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