HYB314405BJL-60 Ver la hoja de datos (PDF) - Siemens AG

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HYB314405BJL-60

1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)

Siemens AG 

HYB 314405BJ/BJL-50/-60/-70

3.3V 1M x 4 EDO - DRAM

AC Characteristics (cont’d) 5)6)

TA = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

-70

min. max. min. max. min. max.

Write command setup time

tWCS

0

–

Write command to RAS lead time tRWL 13 –

Write command to CAS lead time tCWL 13 –

Data setup time

tDS

0

–

Data hold time

tDH

8

–

0

–

15 –

15 –

0

–

10 –

0

–

17 –

17 –

0

–

12 –

ns 15

ns

ns

ns 16

ns 16

Read-modify-Write Cycle

Read-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay

time

OE command hold time

tRWC

tRWD

tCWD

tAWD

tOEH

118 –

64 –

27 –

39 –

10 –

138 –

77 –

32 –

47 –

13 –

162 –

89 –

36 –

54 –

15 –

ns

ns 15

ns 15

ns 15

ns

Hyper Page Mode (EDO) Cycle

Hyper page mode (EDO) cycle tHPC 20 –

25 –

30 –

ns

time

CAS precharge time

Access time from CAS

precharge

tCP

8

–

10 –

10 –

ns

tCPA

–

27 –

32 –

37 ns 7

Output data hold time

tCOH

RAS pulse width in hyper page tRAS

mode

5

–

5

–

5

–

ns

50 200 k 60 200 k 70 200 k ns

CAS precharge to RAS Delay

tRHCP

27

–

32 –

37 –

ns

Hyper Page Mode (EDO) Read-modify-Write Cycle

Hyper page mode (EDO) read- tPRWC 58 –

68 –

77 –

ns

write cycle time

CAS precharge to WE

tCPWD 41

–

49 –

56 –

ns

Semiconductor Group

8

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