HYB314405BJL-60 Ver la hoja de datos (PDF) - Siemens AG

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HYB314405BJL-60

1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)

Siemens AG 

1M x 4-Bit Dynamic RAM

(Hyper Page Mode (EDO) version)

HYB 314405BJ/BJL-50/-60/-70

Advanced Information

• 1 048 576 words by 4-bit organization

• 0 to 70 ˚C operating temperature

• Hyper Page Mode - EDO

• Performance:

tRAC RAS access time

tCAC CAS access time

tAA

Access time from address

tRC

Read/Write cycle time

tHPC Hyper page mode (EDO)

cycle time

-50 -60 -70

50 60 70 ns

13 15 20 ns

25 30 35 ns

89 104 124 ns

20 25 30 ns

• Single + 3.3 V (± 0.3 V) supply

• Low power dissipation

max. 252 mW active (-50 version)

max. 216 mW active (-60 version)

max. 198 mW active (-70 version)

• Standby power dissipation:

7.2 mW max. standby (LVTTL)

3.6 mW max. standby (LVCMOS)

720 µW max. standby (LVCMOS) for Low Power Version

• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,

hidden refresh and test mode capability

• All inputs and outputs LVTTL compatible

• 1024 refresh cycles / 16 ms

• 1024 refresh cycles / 128 ms for Low Power Version

• Plastic Packages: P-SOJ-26/20-5 with 300 mil width

Semiconductor Group

1

4.96

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