HYM321005S-50 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYM321005S-50

1M × 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version)

Infineon Technologies 

HYM 321005S/GS-50/-60

1M × 32-Bit EDO-Module

DC Characteristics (contd’ )

TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 2 ns

Parameter

Symbol

Limit Values

min.

max.

Standby VCC supply current

(RAS = CAS = VCC – 0.2 V)

ICC5

–

2

Average VCC supply current, during CAS-

ICC6

before-RAS refresh mode: -50 ns version

–

400

-60 ns version

–

360

(RAS, CAS cycling: tRC = tRC min.)

Unit Test

Condition

mA 1)

mA 2) 4)

mA 2) 4)

Capacitance

TA = 0 to 70 °C; VCC = 5 V ± 10 %; f = 1 MHz

Parameter

Input capacitance (A0 to A9)

Input capacitance (RAS0, RAS2)

Input capacitance (CAS0-CAS3)

Input capacitance (WE)

I/O capacitance (DQ0-DQ31)

Symbol

CI1

CI2

CI3

CI4

CIO1

Limit Values

min.

max.

–

25

–

20

–

20

–

25

–

15

Unit

pF

pF

pF

pF

pF

Semiconductor Group

6

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