HYM321005GS-60 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

HYM321005GS-60

1M × 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version)

Infineon Technologies 

HYM 321005S/GS-50/-60

1M × 32-Bit EDO-Module

Absolute Maximum Ratings

Operating temperature range ......................................................................................... 0 to + 70 °C

Storage temperature range...................................................................................... – 55 to + 125 °C

Input/output voltage ........................................................................... – 0.5 to min (Vcc + 0.5, 7.0) V

Power supply voltage...................................................................................................... – 1 to + 7 V

Power dissipation................................................................................................................... 2.52 W

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage to the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics

TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 2 ns

Parameter

Symbol

Limit Values

min.

max.

Input high voltage

VIH

Input low voltage

VIL

Output high voltage (IOUT = – 5 mA)

VOH

Output low voltage (IOUT = 4.2 mA)

VOL

Input leakage current

II(L)

(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)

Output leakage current

IO(L)

(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)

Average VCC supply current:

ICC1

-50 ns version

-60 ns version

(RAS, CAS, address cycling: tRC = tRC min.)

Standby VCC supply current

ICC2

(RAS = CAS = VIH)

Average VCC supply current, during RAS-only ICC3

refresh cycles:

-50 ns version

-60 ns version

(RAS cycling, CAS = VI,H, tRC = tRC min.)

Average VCC supply current,during hyper page ICC4

mode (EDO):

-50 ns version

-60 ns version

(RAS = VIL, CAS, address cycling:

(tHPC = tHPC min.)

2.4

– 0.5

2.4

–

– 10

– 10

Vcc+0.5

0.8

–

0.4

10

10

–

400

–

360

–

4

–

400

–

360

–

180

–

150

Unit Test

Condition

V

1)

V

1)

V

1)

V

1)

µA 1)

µA 1)

mA 2) 3) 4)

mA 2) 3) 4)

mA –

mA 2) 4)

mA 2) 4)

mA 2) 3) 4)

mA 2) 3) 4)

Semiconductor Group

5

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