HYB511000BJL-70 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYB511000BJL-70

1 M×1-Bit Dynamic RAM Low Power 1 M×1-Bit Dynamic RAM

Infineon Technologies 

HYB 511000BJ/BJL-50/-60/-70

1 M × 1-DRAM

AC Characteristics (cont’d) 4) 13)

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns

Parameter

Symbol

-50

min. max.

Write command setup

tWCS

0

–

time

10)

CAS to WE delay

tCWD

15

–

time

10)

RAS to WE delay time 10) tRWD

50

–

Column address to WE tAWD

25

–

delay time

10)

CAS setup time (CAS- tCSR

5

–

before-RAS cycle)

CAS hold time (CAS-

tCHR

10

–

before-RAS cycle)

RAS to CAS precharge tRPC

0

–

time

CAS precharge time

(CAS-before-RAS

counter test cycle)

tCPT

25

–

Test mode enable setup tTES

0

–

time referenced to RAS

Test mode enable hold tTEHR

0

–

time referenced to RAS

Test mode enable hold tTEHC

0

–

time referenced to CAS

Limit Values

-60

min. max.

0

–

-70

min. max.

0

–

15

–

20

–

60

–

30

–

70

–

35

–

5

–

5

–

15

–

15

–

0

–

0

–

30

–

40

–

0

–

0

–

0

–

0

–

0

–

0

–

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Capacitance

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; f = 1 MHz

Parameter

Input capacitance (A0 to A9, DI)

Input capacitance (RAS, CAS, WE, TF)

Output capacitance (DO)

Symbol

CI1

CI2

CO

Limit Values

min.

max.

–

5

–

7

–

7

Unit

pF

pF

pF

Semiconductor Group

41

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