HYB5118165BST-60 Ver la hoja de datos (PDF) - Infineon Technologies
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HYB5118165BST-60 Datasheet PDF : 24 Pages
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HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
Capacitance
TA = 0 to 70 °C, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11)
CI1
–
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2
–
7
pF
I/O capacitance (I/O1 - I/O16)
CIO
–
7
pF
AC Characteristics 5, 6
TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for 1k-refresh version
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
OE access time
tRC
84 – 104 – ns
tRP
30 – 40 – ns
tRAS
50 10k 60 10k ns
tCAS
8 10k 10 10k ns
tASR
0 – 0 – ns
tRAH
8 – 10 – ns
tASC
0 – 0 – ns
tCAH
8 – 10 – ns
tRCD
12 37 14 45 ns
tRAD
10 25 12 30 ns
tRSH
13 – 15 – ns
tCSH
40 – 50 – ns
tCRP
5 – 5 – ns
tT
1
50 1
50 ns 7
tREF
– 16 – 16 ms
tRAC
–
50 –
60 ns 8, 9
tCAC
–
13 –
15 ns 8, 9
tAA
–
25 –
30 ns 8, 10
tOEA
– 13 – 15 ns
Semiconductor Group
7
1998-10-01
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