HYB3118165BST-60 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
HYB3118165BST-60 Datasheet PDF : 24 Pages
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HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 °C
Storage temperature range........................................................................................ – 55 to 150 °C
Input/output voltage (5 V versions) .................................................... – 0.5 to min (VCC + 0.5, 7.0) V
Input/output voltage (3.3 V versions) ................................................. – 0.5 to min (VCC + 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................. 1.0 W
Power dissipation (3.3 V versions) .......................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, tT = 2 ns
Parameter
5 V Versions
Power supply voltage
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
3.3 V Versions
Power supply voltage
Input high voltage
Input low voltage
TTL Output high voltage (IOUT = – 2 mA)
TTL Output low voltage (IOUT = 2 mA)
CMOS Output high voltage (IOUT = – 100 µA)
CMOS Output low voltage (IOUT = 100 µA)
Symbol Limit Values
min.
max.
Unit Test
Condition
VCC
4.5
5.5
V
VIH
2.4
VCC + 0.5 V
1
VIL
– 0.5 0.8
V
1
VOH
2.4
–
V
1
VOL
–
0.4
V
1
VCC
3.0
3.6
V
VIH
2.0
VCC + 0.5 V
1
VIL
– 0.5 0.8
V
1
VOH
2.4
–
V
1
VOL
–
0.4
V
1
VOH
VCC – 0.2 –
V
VOL
–
0.2
V
Semiconductor Group
5
1998-10-01
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