Q67100-Q1073 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
Q67100-Q1073 Datasheet PDF : 24 Pages
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HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M × 16 DRAM
Capacitance
TA = 0 to 70 °C, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11)
CI1
–
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2
–
7
pF
I/O capacitance (I/O1 - I/O16)
CIO
–
7
pF
AC Characteristics 5, 6
TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for 1k-refresh version
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
OE access time
tRC
90 –
110 –
ns
tRP
30 –
40 –
ns
tRAS
50 10k 60 10k ns
tCAS
13 10k 15 10k ns
tASR
0
–
0
–
ns
tRAH
8
–
10 –
ns
tASC
0
–
0
–
ns
tCAH
10 –
15 –
ns
tRCD
18 37 20 45
tRAD
13 25 15 30 ns
tRSH
13 –
15 –
ns
tCSH
50 –
60 –
ns
tCRP
5
–
5
–
ns
tT
3
50 3
50 ns 7
tREF
–
16 –
16 ms
tRAC
–
50 –
60 ns 8 ,9
tCAC
–
13 –
15 ns 8, 9
tAA
–
25 –
30
ns 8, 10
tOEA
–
13 –
15 ns
Semiconductor Group
7
1998-10-01
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