HYB5118160BSJ-50 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

HYB5118160BSJ-50

1M × 16 DRAM

Infineon Technologies 

1M × 16-Bit Dynamic RAM

1k Refresh

(Fast Page Mode)

HYB 5118160BSJ-50/-60

HYB 3118160BSJ-50/-60

Advanced Information

• 1 048 576 words by 16-bit organization

• 0 to 70 °C operating temperature

• Fast Page Mode operation

• Performance:

tRAC

RAS access time

tCAC

CAS access time

tAA

Access time from address

tRC

Read/Write cycle time

tPC

Fast page mode cycle time

-50 -60

50 60 ns

13 15 ns

25 30 ns

84 104 ns

35 40 ns

• Power Dissipation, Refresh & Addressing:

Power Supply

Addressing

Refresh

Active

TTL Standby

CMOS Standby

HYB5118160 HYB3118160

-50 -60 -50 -60

5 V ± 10 % 3.3 V ± 0.3 V

10/10

10/10

1024 cycles / 16 ms

715 632 468 414 mW

11

7.2

mW

5.5

3.6

mW

• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh

• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible

• Plastic Package:

P-SOJ-42-1

400 mil

Semiconductor Group

1

1998-10-01

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