DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

INA-30311 Ver la hoja de datos (PDF) - HP => Agilent Technologies

Número de pieza
componentes Descripción
Fabricante
INA-30311
HP
HP => Agilent Technologies HP
INA-30311 Datasheet PDF : 6 Pages
1 2 3 4 5 6
1 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-30311
Features
• Internally Biased, Single 3 V
Supply (6 mA)
• 3.5 dB NF
• 13 dB Gain
• Unconditionally Stable
SOT-143 Surface Mount
Package
Applications
• LNA or IF Amplifier for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM, and
Wireless LAN Applications
Pin Connections and
Package Marking
INPUT
GND
VCC
OUTPUT
Equivalent Circuit (Simplified)
VCC
RF
INPUT
RF
OUTPUT
GROUND
Description
Hewlett-Packard’s INA-30311 is a
Silicon monolithic amplifier for
applications to 1.0 GHz. Packaged
in a miniature SOT-143 package,
it requires very little board space.
The INA-30311 uses an internally
biased topology which eliminates
the need for external components
and provides decreased sensitiv-
ity to ground inductance.
The INA-30311 is designed with
an output impedance that varies
from near 200 at low
frequencies to near 50 at higher
frequencies. This provides a
matching advantage for IF
circuits, as well as improved
power efficiency, making it
suitable for battery powered
designs.
The INA-30311 is fabricated using
HP’s 30 GHz fMAX ISOSATTM
Silicon bipolar process which
uses nitride self-alignment sub-
micrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
5963-6679E
6-140

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]