DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

Q67006-A9299 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
Q67006-A9299
Infineon
Infineon Technologies Infineon
Q67006-A9299 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TLE 4206
Electrical Characteristics (contd)
8 V < VS < 18 V; IOUT1-2 = 0 A; 40 °C < Tj < 150 °C
(unless otherwise specified)
Parameter
Symbol
Limit Values Unit Test Condition
min. typ. max.
Input-Interface
Input REF
Quiescent voltage
Input resistance
VREFq
RREF
200
mV IREF = 0 µA
6
k0 V < VREF < 0.5 V
Input FB
Quiescent voltage
Input resistance
VFBq
RFB
200
mV IFB = 0 µA
6
k0 V < VFB < 0.5 V
Input/Output HYST
Current Amplification
AHYST = IHYST / (IREF IFB)
Current Offset
Threshold voltage High
Deadband voltage High
Deadband voltage Low
Threshold voltage Low
Hysteresis Window
Deadband Window
AHYST
0.8
IHYSTIO
2
VHYH / VS
VDBH / VS
VDBL / VS
VHYL / VS
VHYW / VS 3
VDBW / VS 0.4
0.95 1.1
0.35 3
52
50.4
49.6
48
45
0.8 1.2
20 µA < IHYST
< 10 µA;
10 µA < IHYST
< 20 µA;
IREF = 250 µA
VHYST = VS / 2
µA IREF = IFB = 250 µA
VHYST = VS / 2
%
%
%
%
% (VHYH VHYL)/ VS
% (VDBH VDBL)/ VS
Data Sheet
8
2000-03-01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]