SPA-1218 Ver la hoja de datos (PDF) - Stanford Microdevices

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SPA-1218

1960 MHz 1 Watt Power Amp with Active Bias

Stanford Microdevices 

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SPA-1218 1950 MHz 1 Watt Power Amp.

Pin # Function

Description

1

VCC VCC is the supply voltage for the active bias network.

Bypassing in the appropriate location as shown on

application schematic is required for optimum RF

performance.

2

Vbias Vbias is the bias control pin for the active bias network.

Device current is set by the current into this pin.

Recommended configuration is shown in the Application

Schematic. Bypassing in the appropriate location as

shown on application schematic is required for optimum

RF performance.

3

RF In RF input pin. This pin requires the use of an external

DC blocking capacitor chosen for the frequency of

operation.

4

N/C No connection

3

5 RF Out/Vcc RF output and bias pin. Bias should be supplied to this

pin through an external RF choke. Because DC biasing

is present on this pin, a DC blocking capacitor should

be used in most applications (see application

schematic). The supply side of the bias network should

be well bypassed. An output matching network is

necessary for optimum performance.

6 RF Out/Vcc Same as Pin 5

7 RF Out/Vcc Same as Pin 5

8 RF Out/Vcc Same as Pin 5

Device Schematic

1

2

ACTIVE BIAS

NETWORK

5-8

Absolute Maximum Ratings

Operation of this device above any one of these

parameters may cause permanent damage.

Bias Conditions should also satisfy the following

expression: IDVD (max) < (TJ - TOP)/Rth,j-l

Parameter

Supply Current (ID)

Device Voltage (VD)

Power Dissipation

Operating Temperature (TOP)

RF Input Power

Storage Temperature Range

Operating Junction Temperature (TJ)

Value

750

6.0

4.0

-40 to +85

+500

-40 to +150

+150

Unit

mA

V

W

ºC

mW

ºC

ºC

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

4

http://www.stanfordmicro.com

EDS-101428 Rev A

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