11N60 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor

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componentes Descripción

Fabricante

11N60

600V,11A N-Channel MOSFET

Alpha and Omega Semiconductor 

AOT11N60/AOTF11N60

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

BVDSS

/∆TJ

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V, TJ=25°C

ID=250µA, VGS=0V, TJ=150°C

ID=250µA, VGS=0V

600

700

0.67

V

V/ oC

IDSS

IGSS

VGS(th)

RDS(ON)

gFS

VSD

IS

ISM

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

VDS=600V, VGS=0V

VDS=480V, TJ=125°C

VDS=0V, VGS=±30V

VDS=5V ID=250µA

VGS=10V, ID=5.5A

VDS=40V, ID=5.5A

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

1

µA

10

±100 nΑ

3.3 3.9 4.5

V

0.56 0.65 Ω

12

S

0.73 1

V

11

A

39

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=25V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1320 1656 1990 pF

100 146 195 pF

6.5 11.2 16 pF

1.7 3.5 5.3

Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=480V, ID=11A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=300V, ID=11A,

RG=25Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V

Qrr

Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V

24 30.6 37 nC

9.6

nC

9.6

nC

39

ns

58

ns

92

ns

42

ns

400 500 600 ns

4.7

5.9 7.1

µC

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. L=60mH, IAS=4.8A, VDD=150V, RG=25Ω, Starting TJ=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0: Jan 2012

www.aosmd.com

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