11N60F Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
11N60F Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
* Notes :
1. 250 µs Pulse Test
2. T = 25oC
C
10-1
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.8
V = 10V
GS
0.6
0.4
V = 20V
GS
0.2
0.0
0
* Note : T = 25oC
J
5
10
15
20
25
30
35
40
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
oss
C
iss
C
rss
* Notes :
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
101
150oC
100
25oC
-55oC
10-1
2
* Note
1. V = 40V
DS
2. 250 µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150 oC
25 oC
* Notes :
1. V = 0V
GS
2. 250 µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10
V = 250V
DS
V = 400V
DS
8
6
4
2
* Note : I = 11A
D
0
0
5
10
15
20
25 30
35 40
45
Q , Total Gate Charge [nC]
G
3
FCP11N60F/FCPF11N60F Rev. A
www.fairchildsemi.com
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