IRFPG50 Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFPG50 Datasheet PDF : 9 Pages
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IRFPG50, SiHFPG50
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 1000 V, VGS = 0 V
VDS = 800 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.6 Ab
VDS = 100 V, ID = 3.6 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 6.1 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 500 V, ID = 6.1 A,
Rg = 6.2 , RD = 81, see fig. 10b
Internal Drain Inductance
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
MIN.
1000
-
2.0
-
-
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
1.2
-
V/°C
-
4.0
V
-
± 100 nA
-
100
μA
-
500
-
2.0
-
-
S
2800
-
250
-
pF
84
-
-
190
-
23
nC
-
110
19
-
35
-
ns
130
-
36
-
5.0
-
nH
13
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
D
showing the
Pulsed Diode Forward Currenta
integral reverse
G
ISM
p - n junction diode
S
-
-
6.1
A
-
-
24
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.1 A, VGS = 0 Vb
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 6.1 A, dI/dt = 100 A/μsb
630
950
ns
Qrr
-
3.5
5.3
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91254
S11-0441-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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