IRFHE4250DTRPBF Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IRFHE4250DTRPBF Datasheet PDF : 12 Pages
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VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.10
13
60
Q2
25
1.35
35
60
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FASTIRFET™
IRFHE4250DPbF
HEXFET® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low thermal resistance path to the PCB
Low thermal resistance path to the top
Low charge control MOSFET (13nC typical)
Low RDSON synchronous MOSFET (<1.35m)
Intrinsic schottky diode with low forward voltage on Q2
RoHS compliant, halogen-free
MSL2, industrial qualification
DUAL PQFN 6X6 mm
Benefits
Increased power density
Increased power density
Increased power density
results in Lower switching losses
Lower conduction losses
Lower switching losses
Environmentally friendlier
Increased reliability
Base part number
IRFHE4250DPbF
Package Type
Dual PQFN 6mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRFHE4250DTRPbF
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 12
Q1 Max. Q2 Max.
± 16
86 303
69 243
60
180
156
100
1.3
60
525
156
100
1.3
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
3.7
0.91
24
17
Q2 Max.
0.91
2.1
24
17
Units
°C/W
1 www.irf.com © 2013 International Rectifier
September 26, 2013
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