2SB1260 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1260 Datasheet PDF : 3 Pages
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Transistors
2SB1260 / 2SB1181 / 2SB1241
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO -80
-
-
V IC=-50µA
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVCEO -80
-
-
V IC=-1mA
BVEBO -5
-
-
V IE=-50µA
ICBO
-
-
-1
µA VCB=-60V
IEBO
-
-
-1
µA VEB=-4V
Collector-emitter saturation voltage
VCE(sat)
-
-
-0.4
V IC/IB=-500mA/-50mA
2SB1260, 2SB1181
82
-
390
-
DC current transfer ratio
hFE
VCE=-3V, IC=-0.1A
2SB1241
120
-
390
-
2SB1260, 2SB1241
Transition frequency
fT
2SB1181
Output capacitance
Cob
-
100
- MHz VCE=-5V, IE=50mA, f=30MHz
-
100
- MHz VCE=-10V, IE=50mA, f=30MHz
-
25
-
pF VCB=-10V, IE=0A, f=1MHz
!Packaging specifications and hFE
Type
2SB1260
2SB1241
2SB1181
Package
Code
Basic ordering
hFE unit (pieces)
PQR
QR
PQR
TL
2500
-
-
Taping
TV2
2500
-
-
T100
1000
-
-
hFE values are classified as follows :
Item
P
Q
R
hFE
82~180 120~270 180~390
!Electrical characteristic curves
-1000
Ta=25˚C
VCE=-5V
-100
-10
-1
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25˚C
-1.0
-0.45mA
-0.8
-0.4mA
-0.35mA
-0.6
-0.3mA
-0.25mA
-0.4
-0.2mA
-0.15mA
-0.2
0
0
-0.1mA
-0.05mA
IB=0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
1000
500
Ta=25˚C
200
VCE=-3V
100
50
-1V
20
10
-1 -2 -5 -10 -20 -50-100 -200-500-1000-2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current
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