2SK2115 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK2115 Datasheet PDF : 6 Pages
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2SK2114, 2SK2115
Electrical Characteristics (Ta = 25°C)
Item
Drain to source 2SK2114
breakdown
voltage
2SK2115
Gate to source breakdown
voltage
Gate to source leak current
Zero gate
2SK2114
voltage drain
current
2SK2115
Gate to source cutoff voltage
Static drain to 2SK2114
source on state 2SK2115
resistance
Forward transfer admittance
Symbol Min
V(BR)DSS
450
500
V(BR)GSS
±30
I GSS
—
I DSS
—
VGS(off)
2.0
RDS(on)
—
—
|yfs|
2.5
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note 1. Pulse Test
Typ
—
—
—
—
—
1.0
1.2
4.0
640
160
20
10
25
50
30
0.95
300
Max Unit
—
V
—
V
±10 µA
250 µA
3.0 V
1.4 Ω
1.5
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
—
V
—
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2.5 A, VGS = 10 V*1
ID = 2.5 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2.5 A
VGS = 10 V
RL = 12 Ω
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0,
diF / dt = 100 A / µs
See characteristics curve of 2SK1155, 2SK1156.
3
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