2SK2115 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2115

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2114, 2SK2115

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK2114

2SK2115

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Symbol

VDSS

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

5

A

20

A

5

A

35

W

150

°C

–55 to +150

°C

2

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