4800B Ver la hoja de datos (PDF) - Philips Electronics
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4800B Datasheet PDF : 12 Pages
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Philips Semiconductors
SI4800
N-channel TrenchMOS™ logic level FET
10
ID
10 V 5 V
3V
(A)
8
6
03ao99
2.8 V
2.7 V
10
ID
(A)
8
VDS > ID x RDSon
003aaa326
6
Tj = 150 °C
4
2.5 V
2
VGS = 2.3 V
0
0
0.2
0.4
0.6
0.8
1
VDS (V)
4
25 °C
2
0
0
1
2
3
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
80
RDSon
(mΩ)
60
40
20
03ap00
2
VGS = 2.8 V
a
1.5
3V
1
4V
5V
0.5
10 V
03aa27
0
0
2
4
6
8 ID (A) 10
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12899
Product data
Rev. 02 — 17 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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