4800B Ver la hoja de datos (PDF) - Philips Electronics
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4800B Datasheet PDF : 12 Pages
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Philips Semiconductors
SI4800
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
VGS(th)
IDSS
gate-source threshold voltage
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
ID(on) on-state drain current
Dynamic characteristics
ID = 250 µA; VDS = VGS; Figure 9
VDS = 24 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 9 A; Figure 7 and 8
VGS = 4.5 V; ID = 7 A; Figure 7
VDS ≥ 5 V; VGS = 10 V
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 15 V; ID = 9 A
ID = 8 A; VDD = 15 V; VGS = 5 V; Figure 13
VDD = 15 V; ID = 1.5 A; VGS = 10 V; RG = 6 Ω
VSD
source-drain (diode forward) voltage IS = 7 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 7 A; dIS/dt = −100 A/µs; VR = 30 V;
VGS = 0 V
Min Typ Max Unit
0.8 -
-
V
-
-
1 µA
-
-
5 µA
-
-
100 nA
-
15.5 18.5 mΩ
-
24 33 mΩ
30 -
-
A
-
19 -
S
-
11.8 -
nC
-
2.7 -
nC
-
5-
nC
-
6 16 ns
-
7 15 ns
-
23 30 ns
-
11 15 ns
-
0.86 1.2 V
-
25 80 ns
9397 750 12899
Product data
Rev. 02 — 17 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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