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4800B

N-channel TrenchMOS logic level FET

Philips Electronics 

Philips Semiconductors

SI4800

N-channel TrenchMOS™ logic level FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter

Rth(j-a) thermal resistance from junction to ambient

Conditions

mounted on a printed-circuit board;

minimum footprint; tp ≤ 10 s; Figure 4

Min Typ Max Unit

- - 50 K/W

5.1 Transient thermal impedance

102

Zth(j-amb) δ = 0.5

(K/W)

0.2

10 0.1

0.05

0.02

1

03af83

10-1

single pulse

10-2

10-4

10-3

10-2

10-1

1

P

δ

=

tp

T

tp

t

T

10

102

103

tp (s)

Tamb = 25 °C

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.

9397 750 12899

Product data

Rev. 02 — 17 February 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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