CLF1G0035-100 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

CLF1G0035-100

Broadband RF power GaN HEMT

NXP Semiconductors. 

NXP Semiconductors

CLF1G0035-100; CLF1G0035S-100

Broadband RF power GaN HEMT

Table 9. List of components …continued

See Figure 1 and Figure 2.

Component

Description

C22, C26

multilayer ceramic chip capacitor

C23

multilayer ceramic chip capacitor

C25

multilayer ceramic chip capacitor

C27

electrolytic capacitor

E1, E2

drain voltage connection

J1, P1, P2, P3, P4 1 row, 4-way vertical DC connector header

J2

RF in connector

J3

RF out connector

L2

inductor

Value

10 nF

10 F

1 F

470 F

-

-

-

-

14 nH

L3

ferrite bead

Q1

transistor

Q2

transistor

Q3

transistor

R1

resistor

R2

resistor

R3

resistor

R4

resistor

R21, R22

resistor

T1

semi-rigid coax

T2

semi-rigid coax

Z1, Z2, Z3, Z4, Z5, microstrip lines

Z6, Z7, Z8

-

-

-

-

20.0 

10.0 k

200 

0.005 

0

18 mm

16 mm

-

Remarks

generic

TDK C5750X7S2A106M

generic

Panasonic EEE-TK1J471AM

3 turns, 18 AWG,

inner diameter = 2.5 mm

Fair-Rite 2743019447

NXP CLF1G0035-100

NXP BC857B

NXP PSMN8R2-80YS

generic

generic

ATC LR12010T0200J

Susumu RL7520WT-R005-F

generic

Micro-coax UT-062C-18

Micro-coax UT-062C-18

CLF1G0035-100_1G0035S-100

Objective data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 29 January 2013

© NXP B.V. 2013. All rights reserved.

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