2SD1060L-S-T60-R Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

2SD1060L-S-T60-R

NPN PLANAR SILICON TRANSISTOR

Unisonic Technologies 

2SD1060

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

Collector to Emitter Voltage

VCBO

60

V

VCEO

50

V

Emitter to Base Voltage

Collector Current

VEBO

6

V

IC

5

A

Collector Current (Pulse)

SOT-89

ICP

9

A

500

mW

Collector Dissipation

TO-126/TO-251/TO-252

TO-220/TO-220F

PC

1

W

2

W

TO-92

625

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C)

PARAMETER

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Gain Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Turn-ON Time

Storage Time

Fall Time

 CLASSIFICATION of hFE1

SYMBOL

TEST CONDITIONS

BVCBO

BVCEO

IC =1mA, IE=0

IC=1mA, RBE =

BVEBO

ICBO

IC =0, IE=1mA

VCB=40V, IE=0

IEBO

hFE1

VEB=4V, IC=0

VCE=2V, IC=1A

hFE2

fT

VCE=2V, IC=3A

VCE =5V, IC =1A

Cob VCB =10V, f=1MHz

VCE(SAT) IC=3A, IB=0.3A

tON See specified test circuit

tSTG See specified test circuit

tF

See specified test circuit

MIN TYP MAX UNIT

60

V

50

V

6

V

0.1 mA

0.1 mA

70

360

30

30

MHZ

100

pF

0.4 V

0.1

μs

1.4

μs

0.2

μs

RANK

RANGE

Q

70-140

R

100-200

S

180-360

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R208-023.E

Share Link: