2SD1060-R-T92-T(2008) Ver la hoja de datos (PDF) - Unisonic Technologies

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componentes Descripción

Fabricante

2SD1060-R-T92-T
(Rev.:2008)

NPN PLANAR SILICON TRANSISTOR

Unisonic Technologies 

2SD1060

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

6

V

Collector Current

IC

5

A

Collector Current (Pulse)

ICP

9

A

SOT-89

500

mW

Collector Dissipation

TO-126/TO-251

TO-252/TO-220

PC

1

W

2

W

TO-92

625

mW

Junction Temperature

Storage Temperature

TJ

TSTG

+150

℃

-40 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Gain Bandwidth Product

Output Capacitance

Collector-to-Emitter Saturation Voltage

Turn-ON Time

Storage Time

Fall Time

SYMBOL

TEST CONDITIONS

BVCBO IC =1mA, IE=0

BVCEO IC=1mA, RBE =∞

BVEBO IC =0, IE=1mA

ICBO VCB=40V, IE=0

IEBO VEB=4V, IC=0

hFE1 VCE=2V, IC=1A

hFE2 VCE=2V, IC=3A

fT

VCE =5V, IC =1A

Cob VCB =10V, f=1MHz

VCE(SAT) IC=3A, IB=0.3A

tON See specified test circuit

tSTG See specified test circuit

tF See specified test circuit

„ CLASSIFICATION of hFE1

RANK

RANGE

Q

70-140

R

100-200

MIN TYP MAX UNIT

60

V

50

V

6

V

0.1 mA

0.1 mA

70

360

30

30

MHZ

100

pF

0.4 V

0.1

µs

1.4

µs

0.2

µs

S

180-360

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R208-023.C

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