2SD1367 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SD1367 Datasheet PDF : 5 Pages
| |||
2SD1367
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
VCBO
20
V
VCEO
16
V
VEBO
6
V
IC
2
A
i *1
C(peak)
3
A
PC * 2
1
W
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 20
—
voltage
Collector to emitter breakdown V(BR)CEO 16
—
voltage
Emitter to base breakdown
V(BR)EBO
6
—
voltage
Collector cutoff current
I CBO
—
—
Emitter cutoff current
I EBO
—
DC current transfer ratio
hFE* 1
100 —
Collector to emitter saturation VCE(sat)
—
voltage
0.15
Base to emitter saturation
VBE(sat)
—
0.9
voltage
Gain bandwidth product
fT
—
100
Collector output capacitance Cob
—
20
Note: 1. The 2SD1367 is grouped by hFE as follows.
Mark
BA
BB
BC
hFE
100 to 200 160 to 320 250 to 500
Max
—
—
—
0.1
0.1
500
0.3
1.2
—
—
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 16 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
VCE = 2 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
2
Share Link: 