IXGQ90N33TC Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGQ90N33TC Datasheet PDF : 5 Pages
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IXGQ90N33TCD1 IXGA90N33TC
IXGQ90N33TC
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
gfS
IC = 45A, VCE = 10V, Note 1
40
65
S
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
2320
pF
180
pF
21
pF
Qg
Qge
IC = 45A, VGE = 15V, VCE = 0.5 • VCES
Qgc
69
nC
15
nC
13
nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 45A, VGE = 15V
VCE = 240V, RG = 5Ω
13
30
38
49
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = 45A, VGE = 15V
VCE = 240V, RG = 5Ω
13
28
50
74
ns
ns
ns
ns
RthJC
RthCS
TO-3P
0.62 °C/W
0.21
°C/W
TO-263 Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06 4.83
0.51 0.99
1.14 1.40
0.40 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160 .190
.020 .039
.045 .055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .005
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = 20A, VGE = 0V, Note 1
RthJC
TO-3P Outline
Characteristic Values
Min. Typ. Max
2.0 V
2.5 °C/W
Note:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
1 = Gate
3 = Emitter
2,4 = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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