IXGQ90N33TCD1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGQ90N33TCD1 Datasheet PDF : 5 Pages
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Trench Gate,
High Speed,
IGBTs
For PDP Applications
IXGA90N33TC
IXGQ90N33TC
IXGQ90N33TCD1
VCES =
ICP
=
VCE(sat) ≤
330V
360A
1.80V
90N33TC 90N33TCD1
Symbol
VCES
VGES
VGEM
IC25
IC(RMS)
IC110
ICP
ICP
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC= 25°C (Chip Capability)
Lead Current Limit
TC = 110°C
TC < 150°C, tp < 10μs
TC < 150°C, tp < 10μs, Duty cycle < 1%
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-3P)
TO-263
TO-3P
Maximum Ratings
330
V
±20
V
±30
V
90
A
75
A
38
A
60
A
360
A
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
2.5
5.5
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
VGE = 15V, IC = 20A, Note 1
IC = 45A
TJ = 125°C
IC = 90A
TJ = 125°C
Characteristic Values
Min. Typ. Max.
330
V
3.0
5.0 V
1 μA
200 μA
±200 nA
1.54
1.54
1.82
1.95
1.40 V
1.80 V
V
V
V
TO-263 AA (IXGA)
G
E
C (Tab)
TO-3P (IXGQ)
G
C
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
• Low VCE(sat)
- for minimum On-State Conduction
Losses
• Fast Switching
Applications
• PDP Screen Drivers
© 2011 IXYS CORPORATION, All Rights Reserved
DS99754B (07/11)
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