2SK2957L Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2957L

Silicon N Channel MOS FET High Speed Power Switching / 2SK2957(L), 2SK2957(S)

Hitachi -> Renesas Electronics 

2SK2957(L),2SK2957(S)

Reverse Drain Current vs.

Source to Drain Voltage

50

40

10 V

30

5V

VGS = 0, –5 V

20

10

Pulse Test

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

D=1

Tc = 25°C

0.5

0.3

0.2

0.1

0.1

0.05

0.03

0.02

0.011shot

pulse

0.01

10 µ

100 µ

q ch – c(t) = g s (t) • q ch – c

q ch – c = 1.67 °C/W, Tc = 25 °C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (S)

6

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