2SD389 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

2SD389

Silicon NPN Power Transistor

Unspecified 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD389

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A; L= 25mH

60

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.4A

1.0

V

VBE(on) Base-Emitter On Voltage

ICBO

Collector Cutoff Current

IC= 1A; VCE= 3V

VCB= 20V; IE= 0

1.4

V

30 μA

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

www.iscsemi.cn hFE-1

DC Current Gain

hFE-2

DC Current Gain

IC= 0.1A; VCE= 3V

40

IC= 1A; VCE= 3V

30

‹ hFE-2 Classifications

Q

P

O

30-60 50-100 80-160

1.0 mA

160

isc Website：www.iscsemi.cn

2

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