2SD389 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

2SD389

Silicon NPN Power Transistor

Unspecified 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD389

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 60V(Min)

·Wide Area of Safe Operation

·High Power Dissipation

APPLICATIONS

·Designed for medium power amplifier applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

3.0

A

25

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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