RD15HVF1(2006) Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

Número de pieza

componentes Descripción

Fabricante

RD15HVF1
(Rev.:2006)

MITSUBISHI RF POWER MOS FET RoHS Compliance, Silicon MOSFET Power Transistor

MITSUBISHI ELECTRIC  

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MOS FET

RD15HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

f=520MHz Zout

f=520MHz Zin

f=175MHz Zout

f=175MHz Zin

Zo=50ohm

Zin , Zout

f

(MHz)

175

520

Zin

(ohm)

2.34-j8.01

5.42+j9.22

Zout

(ohm)

3.06+j0.74

6.02+j12.34

Conditions

Po=15W, Vdd=12.5V,Pin=0.6W

Po=15W, Vdd=12.5V,Pin=3.0W

RD15HVF1

MITSUBISHI ELECTRIC

7/9

10 Jan 2006

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