RD15HVF1(2006) Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC

Número de pieza

componentes Descripción

Fabricante

RD15HVF1
(Rev.:2006)

MITSUBISHI RF POWER MOS FET RoHS Compliance, Silicon MOSFET Power Transistor

MITSUBISHI ELECTRIC  

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MITSUBISHI RF POWER MOS FET

RD15HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

TEST CIRCUIT(f=520MHz)

Vgg

Vdd

C1

9.1kOHM

L3

RF-IN

8.2kOHM 100OHM

10pF

15pF

L1

520MHz

L2

RD15HVF1

56pF

12pF

5pF

C3

C2

RF-OUT

56pF

7

90

100

7

90

100

C1:2200pF 10uF in parallel

C2:2200pF*2 in parallel

C3:2200pF,330uF in parallel

Note:Board material-Teflon substrate

micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm

Dimensions:mm

L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

RD15HVF1

MITSUBISHI ELECTRIC

6/9

10 Jan 2006

Share Link: