NLU1G00MUTCG(2016) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NLU1G00MUTCG Datasheet PDF : 7 Pages
| |||
NLU1G00
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
VIL
VOH
VOL
IIN
ICC
Parameter
Low−Level
Input Voltage
Low−Level
Input Voltage
High−Level
Output Voltage
Low−Level
Output Voltage
Input Leakage
Current
Quiescent
Supply Current
Conditions
VIN = VIH or VIL
IOH = −50 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
0 v VIN v 5.5 V
VIN = 5.5 V or
GND
VCC
(V)
1.65
2.3 to
5.5
1.65
2.3 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
TA = 25 5C
Min Typ Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
1.9 2.0
2.9 3.0
4.4 4.5
2.58
3.94
0
0.1
0
0.1
0
0.1
0.36
0.36
±0.1
1.0
TA = +855C
Min
Max
0.75 x
VCC
0.70 x
VCC
0.25 x
VCC
0.30 x
VCC
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
10
TA = −555C to
+1255C
Min
Max Unit
V
0.25 x V
VCC
0.30 x
VCC
1.9
V
2.9
4.4
V
2.34
3.66
0.1
V
0.1
0.1
0.52
0.52
±1.0 mA
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
VCC
Test
TA = 25 5C
(V)
Condition Min Typ Max
TA = +855C
Min
Max
TA = −555C to
+1255C
Min
Max Unit
tPLH,
tPHL
Propagation Delay,
Input A or B to
Output Y
3.0 to
3.6
4.5 to
5.5
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.1 8.8
5.9 12.3
3.5 5.9
4.2 7.9
10.5
14
7.0
9.0
12.5
ns
16.5
9.0
11
CIN
Input Capacitance
5.5
10
10
10
pF
CPD
Power Dissipation
5.0
11
pF
Capacitance
(Note 3)
3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.
www.onsemi.com
3
Share Link: 