2SC3336 Ver la hoja de datos (PDF) - SavantIC Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC3336 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3336
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=9;L=100mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=7.5A; IB=1.5A
VBE sat Base-emitter saturation voltage
IC=7.5A; IB=1.5A
ICBO
Collector cut-off current
VCB=400V; IE=0
ICEO
Collector cut-off current
VCE=350V; RBE=9
hFE-1
DC current gain
IC=7.5A ; VCE=5V
hFE-2
DC current gain
Switching times
IC=15A ; VCE=5V
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=15A ; VCC=150V
IB=-IB=3.0A
MIN TYP. MAX UNIT
400
V
10
V
1.0
V
1.5
V
50
µA
50
µA
12
5
0.5
µs
1.5
µs
0.5
µs
2
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