C2309 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

C2309

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC2309

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

55

V

50

V

5

V

100

mA

200

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 55

—

voltage

Collector to emitter breakdown V(BR)CEO 50

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

250 —

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

230

Collector output capacitance Cob

—

1.8

Note: 1. The 2SC2309 is grouped by hFE as follows.

D

E

F

250 to 500 400 to 800 600 to 1200

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

0.5 µA

0.5 µA

1200

0.75 V

0.2 V

VCB = 18 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

—

MHz VCE = 12 V, IC = 2 mA

3.5 pF

VCB = 10 V, IE = 0, f = 1 MHz

See characteristic curves of 2SC1345.

2

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