HV9910BNG-G Ver la hoja de datos (PDF) - Microsemi Corporation

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HV9910BNG-G

Universal High-Brightness LED Driver

Microsemi Corporation 

HV9910B

1.0 ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

VIN to GND...................................................... -0.5V to +470V

VDD to GND.......................................................................12V

CS, LD, PWMD, GATE, RT to GND... ....-0.3V to (VDD + 0.3V)

Operating temperature ..................................-40°C to +125°C

Storage temperature .....................................-65°C to +150°C

Continuous power dissipation (TA = +25°C)

8-lead SOIC ...............................................630 mW

16-lead SOIC ...........................................1300 mW

Note: Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions, above those indicated in the

operational listings of this specification, is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

1.1 ELECTRICAL SPECIFICATIONS

TABLE 1-1: ELECTRICAL CHARACTERISTICS (SHEET 1 OF 2)1

Symbol Parameter

Note Min Typ Max Units Conditions

Input

VINDC

Input DC supply voltage

range2

3

IINSD

Shut-down mode supply

current

3

Internal Regulator

VDD

Internally regulated voltage

-

∆VDD, line Line regulation of VDD

-

∆VDD, load Load regulation of VDD

-

UVLO

VDD undervoltage lockout

threshold

3

∆UVLO

VDD undervoltage lockout

hysteresis

-

Current that the regulator

IIN,MAX can supply before IC goes

4

into UVLO

PWM Dimming

VEN(lo) Pin PWMD input low voltage 3

VEN(hi) Pin PWMD input high voltage 3

REN

Pin PWMD pull-down resis-

tance at PWMD

-

8.0

-

450 V DC input voltage

-

0.5 1.0 mA Pin PWMD to GND

7.25 7.5 7.75

VIN = 8.0V, IDD(ext) = 0, 500pF

V at GATE; RT = 226kΩ, PWMD

= VDD

VIN = 8.0 - 450V, IDD(ext) = 0,

0

-

1.0

V 500pF at GATE; RT = 226kΩ,

PWMD = VDD

IDD(ext) = 0 - 1.0mA, 500pF at

0

-

100 mV GATE; RT = 226kΩ, PWMD =

VDD

6.45 6.7 6.95

V VDD rising

-

500

-

mV VDD falling

5.0

-

-

mA VIN = 8.0V

-

-

0.8

V VIN = 8.0 - 450V

2.0

-

-

V VIN = 8.0 - 450V

50 100 150 kΩ VPWMD = 5.0V

 2015 Microchip Technology Inc.

DS20005344A-page 3

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