2SK2980 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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componentes Descripción

Fabricante

2SK2980

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2980

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit Test Conditions

Drain to source breakdown V(BR)DSS

30

—

—

V

voltage

ID = 100µA, VGS = 0

Gate to source breakdown

voltage

Zero gate voltege drain

current

V(BR)GSS

I DSS

+12

—

–10

—

—

—

—

V

IG = +100µA, VDS = 0

—

V

IG = –100µA, VDS = 0

1.0

µA

VDS = 30 V, VGS = 0

Gate to source leak current IGSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

Static drain to source on state RDS(on)

resistance

Forward transfer admittance |yfs|

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

—

—

±5.0 µA

VGS = ±8V, VDS = 0

0.5

—

1.5

V

ID = 10µA, VDS = 5V

—

0.2

0.28 Ω

ID = 500 mA

VGS = 4V Note3

—

0.3

0.5

Ω

ID = 500 mA

VGS = 2.5V Note3

1.2

2.0

—

S

ID = 500 mA

VDS = 10V Note3

—

155

—

pF

VDS = 10V

—

75

—

pF

VGS = 0

—

35

—

pF

f = 1MHz

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Note: 3. Pulse test

4. Marking is “ZZ– ”

—

12

—

ns

VGS = 4V, ID = 500 mA

—

30

—

ns

RL = 20Ω

—

35

—

ns

—

30

—

ns

3

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