2SK2980 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SK2980

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2980

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Drain to source voltage

VDSS

30

Gate to source voltage

VGSS

+12

–10

Drain current

Drain peak current

Channel dissipation

ID

1.0

I Note1

D(pulse)

4

Pch Note2

0.8

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)

Unit

V

V

V

A

A

W

°C

°C

2

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