2SK2980 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
2SK2980 Datasheet PDF : 9 Pages
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2SK2980
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0. 2Ω typ. (VGS = 4 V, ID = 500 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
MPAK
3
D
G
S
ADE-208-571B (Z)
3rd. Edition
Jun 1998
1
2
1. Source
2. Gate
3. Drain
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